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| NUD3048 FET Switch 100 V, 800 mW, N-Channel, TSOP-6 The NUD3048 provides a single device solution for a number of applications requiring a low power, high voltage, FET switch. The package includes a gate resistor and gate to source zener clamp. This switch can accommodate a wide range of input voltages, making it compatible with most current logic levels. Its 100 V rating makes it compatible with 48 V telecom applications. Features http://onsemi.com MARKING DIAGRAM 6 6 1 TSOP-6 CASE 318G STYLE 9 JW7 MG G 1 * * * * * * * * * * 100 V Rating On Gate 2 Integrated 100 k Rg Option Integrated ESD Diode Protection Low Threshold Voltage Pb-Free Package is Available FET Switch Inverter Level Shifter Inrush Limiter Relay Driver Drain 2, 4, 5 Typical Applications JW7 = Specific Device Code M = Month Code G = Pb-Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device NUD3048MT1 NUD3048MT1G Package TSOP-6 TSOP-6 (Pb-Free) Shipping 3000 / Tape & Reel 3000 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 6 Gate 2 100 kW 1 Gate 1 3 Source Figure 1. Block Diagram (c) Semiconductor Components Industries, LLC, 2007 1 January, 2007 - Rev. 5 Publication Order Number: NUD3048/D NUD3048 MAXIMUM RATINGS Symbol VDSS VG1SS ID PD VG2SS TJmax RqJA ESD Drain to Source Voltage - Continuous Gate to Source Voltage - Continuous @ 1.0 mA Drain Current - Continuous (TA =25_C) (Note 1) (Note 2) Power Dissipation (TA =25_C) (Note 1) (Note 2) Gate Resistor to Source Voltage - Continuous Maximum Junction Temperature Thermal Impedance (Junction-to-Ambient) (Note 1) Thermal Impedance (Junction-to-Ambient) (Note 2) Human Body Model (HBM) Class 2 Machine Model Class A According to EIA/JESD22/A114 Specification Rating Value 100 15 0.7 1.2 0.66 1.56 100 150 190 80 2000 160 Unit V V A W V C C/W V V Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. ELECTRICAL CHARACTERISTICS (TJ =25_C unless otherwise noted.) Characteristic OFF CHARACTERISTICS Drain to Source Leakage Current (VDS = 80 V, VGS = 0 V) Gate Body Leakage Current (VGS =10 V, VDS = 0 V) (VGS = 10 V, VDS = 0 V, TJ = 125C) ON CHARACTERISTICS Gate Threshold Voltage (ID = 1.0 mA) Drain to Source Resistance (VGS = 4.5 V, ID = 100 mA) Drain to Source Resistance (VGS = 10 V, ID = 100 mA) DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 5.0 V, VGS = 0 V, f = 10 kHz) Output Capacitance (VDS = 5.0 V, VGS = 0 V, f = 10 kHz) Transfer Capacitance (VDS = 5.0 V, VGS = 0 V, f = 10 kHz) GATE BIAS CHARACTERISTICS Gate Resistor Gate Zener Breakdown Voltage (IZ = 1.0 mA) (Note 3) Gate Zener Breakdown Voltage (IZ = 3.0 mA) (Note 4) 1. 2. 3. 4. Min pad, 1 oz. Cu. 1 inch pad, 1 oz Cu. Measured from gate 1 to source. Measured from gate 2 to source. RG VZ 75 15 100 100 17 115 125 - - kW V Ciss Coss Crss - - - 135 75 26 - - - pF pF pF VGS RDS(on) RDS(on) 1.3 - - 1.7 0.65 0.6 2.0 0.82 0.72 V W W IDSS IGSS IGSS - - - 20 3.0 6.0 100 10 20 mA mA Symbol Min Typ Max Unit http://onsemi.com 2 NUD3048 0.5 VGS = 2.0 V 0.4 VGS = 5.0 V VGS = 3.0 V RDS(on) (W) 0.65 VGS = 4.5 V 0.70 VDS(on) (V) 0.3 0.2 VGS = 7.0 V VGS = 10 V 0.60 0.1 VGS = 10 V 0 0 0.1 0.2 IDS (A) 0.3 0.4 0.5 0.55 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 ID (A) Figure 2. VDS(on) Variation with IDS and Gate Voltage Figure 3. On Resistance Variation with Drain Current and Gate Voltage 1.4 1.2 1 RDS(on) VGS = 4.5 V 0.8 0.6 0.4 0.2 0 -50 VGS = 10 V IGS (mA) 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 50 100 150 0.0 -10 -8 -6 -4 -2 0 VGS (V) 2 4 6 8 10 RDS(on) VARIATION WITH TEMPERATURE Figure 4. Variation of RDS(on) with Temperature and Gate Voltage at ID = 100 mA Figure 5. Gate Leakage Current Variation with Gate Voltage 7.40E-05 LEAKAGE CURRENT IDSS 7.20E-05 7.00E-05 6.80E-05 6.60E-05 6.40E-05 6.20E-05 6.00E-05 -40.0 -20.0 IDSS 0.0 20.0 40.0 60.0 80.0 100.0 120.0 JUNCTION TEMPERATURE Figure 6. Variation of Leakage Current IDSS (A) with VGS = 0 V and VDS = 100 V http://onsemi.com 3 NUD3048 PACKAGE DIMENSIONS TSOP-6 CASE 318G-02 ISSUE P D NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. MILLIMETERS NOM MAX 1.00 1.10 0.06 0.10 0.38 0.50 0.18 0.26 3.00 3.10 1.50 1.70 0.95 1.05 0.40 0.60 2.75 3.00 10 - INCHES NOM 0.039 0.002 0.014 0.007 0.118 0.059 0.037 0.016 0.108 - 6 5 1 2 4 3 HE E b e q 0.05 (0.002) A1 A L c DIM A A1 b c D E e L HE q MIN 0.90 0.01 0.25 0.10 2.90 1.30 0.85 0.20 2.50 0 MIN 0.035 0.001 0.010 0.004 0.114 0.051 0.034 0.008 0.099 0 MAX 0.043 0.004 0.020 0.010 0.122 0.067 0.041 0.024 0.118 10 SOLDERING FOOTPRINT* 2.4 0.094 STYLE 9: PIN 1. LOW VOLTAGE GATE 2. DRAIN 3. SOURCE 4. DRAIN 5. DRAIN 6. HIGH VOLTAGE GATE 1.9 0.075 0.95 0.037 0.95 0.037 0.7 0.028 1.0 0.039 SCALE 10:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5773-3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative http://onsemi.com 4 NUD3048/D |
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